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IR (Infineon Technologies) / IQE006NE2LM5ATMA1
Image is for reference, please contact us to get the real picture
IQE006NE2LM5ATMA1
| Manufacturer Part Number: | IQE006NE2LM5ATMA1 |
| Manufacturer: | IR (Infineon Technologies) |
| Part of Description: | MOSFET N-CH 25V 41A/298A 8TSON |
| Datasheets: | IQE006NE2LM5ATMA1 Datasheets |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
- REMARK
- IR (Infineon Technologies) IQE006NE2LM5ATMA1 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.
Specification
| Type | Description |
|---|---|
| Series | * |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 298A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 82.1 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 5453 pF @ 12 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 89W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | PG-TSON-8-4 |
| Package / Case | 8-PowerTDFN |
BUYING OPTIONS
Stock Status: 4218
Minimum: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
Price is not available, please RFQ |
||
Freight calculation
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately
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