BSC196N10NSGATMA1

REMARK: IR (Infineon Technologies) BSC196N10NSGATMA1 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification

Type	Description
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

BUYING OPTIONS

Stock Status: 10431

Minimum: 1

Quantity	Unit Price	Ext. Price
Price is not available, please RFQ

Freight calculation

US $40 by FedEx.

Arrive in 3-5 days

Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately

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