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Rochester Electronics / FQB34N20LTM

FQB34N20LTM

Manufacturer Part Number: FQB34N20LTM
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR, 3
Datasheets: FQB34N20LTM Datasheets
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Rochester Electronics FQB34N20LTM is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification
Type Description
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUYING OPTIONS

Stock Status: 3306

Minimum: 1

Quantity Unit Price Ext. Price

Price is not available, please RFQ

Freight calculation

US $40 by FedEx.

Arrive in 3-5 days

Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately

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