PBRN123ES,126

REMARK: NXP Semiconductors PBRN123ES,126 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification

Type	Description
Series	-
Package	Tape & Box (TB)
Part Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	40 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	700 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3

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